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File name:mjd112_l.pdf
[preview mjd112 l]
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Mfg:KEC
Model:mjd112 l 🔎
Original:mjd112 l 🔎
Descr: . Electronic Components Datasheets Active components Transistors KEC mjd112_l.pdf
Group:Electronics > Components > Transistors
Uploaded:11-07-2020
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File name mjd112_l.pdf

SEMICONDUCTOR MJD112/L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. A I FEATURES C J DIM MILLIMETERS High DC Current Gain. D A _ 6.60 + 0.2 B _ 6.10 + 0.2 : hFE=1000(Min.), VCE=4V, IC=1A. C _ 5.0 + 0.2 D _ 0.2 1.10 + B Low Collector-Emitter Saturation Voltage. E _

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